STMicroelectronics IRF630

Name: STMicroelectronics IRF630
Brand: STMicroelectronics
SKU: IRF630

N-channel 200 V, 0.35 Ohm typ., 9 A Power MOSFET in D2PAK package

$ 0.598

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Future Electronics	2	IRF630	3,000	50	Tube			0.425	0.405	0.380
Arrow Electronics		IRF630	2,785	1		0.995	0.995	0.816	0.597	0.552
Verical	2	IRF630	1,915	13				0.809	0.592	0.483
TME	2	IRF630	993	1		1.590	1.092	0.792	0.593	0.495	7h
DigiKey		497-2757-5-ND	6,862	1	Tube	2.320	2.320	1.010	0.739	0.588

数据表和文档

下载 STMicroelectronics IRF630 的数据表和制造商文档。

Farnell

Datasheet14 页20 年前

Datasheet13 页7 年前

STMicroelectronics

Arrow Electronics

Mouser

iiiC

库存历史记录

3 个月趋势:

-1.24%

CAD 模型

从我们值得信赖的合作伙伴处下载 STMicroelectronics IRF630 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载
SnapEDA		3D	下载
Ultra Librarian	符号封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Lifecycle StatusProduction (Last Updated: 1 month ago)

描述

由其分销商提供的 STMicroelectronics IRF630 的描述。

N-channel 200 V, 0.35 Ohm typ., 9 A Power MOSFET in D2PAK package

STMicroelectronics

In a Tube of 50, IRF630 N-Channel MOSFET, 9 A, 200 V STripFET, 3-Pin TO-220 STMicroelectronics

Jak Electronics

POWER MOSFET, N-CH, VDSS 200V, RDS(ON) 0.35OHM, ID 9A, TO-220,PD 75W, VGS+/-20V, GFS 4S

RS (Formerly Allied Electronics)

Power MOSFET, N Channel, 200 V, 9 A, 0.4 ohm, TO-220, Through Hole

Avnet

ST IRF630 200V 9A N Channel Power MOSFET, TO-220 Package, 75W

Rapid Electronics

200V 9A 75W 400m´Î@10V4.5A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

Dasenic

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd:

Farnell