相关零件
NXP SemiconductorsPHE13009,127
Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
NXP SemiconductorsPHE13009/DG,127
NOW WEEN - PHE13009 - POWER BIPO / Bipolar (BJT) Transistor NPN 400 V 12 A 80 W Through Hole TO-220AB
onsemiFJPF13009H2TU
400V 50W 12A 6@8A5V 4MHz 3V@12A3A NPN +150¡Í@(Tj) TO-220F Bipolar Transistors - BJT ROHS
NXP SemiconductorsBUJ106A,127
Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
描述
由其分销商提供的 STMicroelectronics BUL743 的描述。
Trans GP BJT NPN 500V 12A 100000mW 3-Pin(3+Tab) TO-220AB Tube
High voltage fast-switching NPN power transistor
Power Bipolar Transistor, 12A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Power Bipolar, NPN, 3V, 2500mA, TO-220, Tube
STMicroelectronics SCT
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage500 V
Collector Emitter Saturation Voltage1.5 V
Collector Emitter Voltage (VCEO)500 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)15 V
hFE Min24
Max Collector Current12 A
Max Operating Temperature150 °C
Max Power Dissipation100 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation100 W
Schedule B8541290080