供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-09-27
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
onsemiFJPF13009TU
Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
onsemiFJPF13009H2TU
400V 50W 12A 6@8A5V 4MHz 3V@12A3A NPN +150¡Í@(Tj) TO-220F Bipolar Transistors - BJT ROHS
onsemiFJP13007H2TU
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
NXP SemiconductorsPHE13009,127
Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
NXP SemiconductorsPHE13009/DG,127
NOW WEEN - PHE13009 - POWER BIPO / Bipolar (BJT) Transistor NPN 400 V 12 A 80 W Through Hole TO-220AB
NXP SemiconductorsBUJ303B,127
NOW WEEN - BUJ303B - POWER BIPOL / Bipolar (BJT) Transistor NPN 400 V 5 A 100 W Through Hole TO-220AB
描述
由其分销商提供的 onsemi FJP13009TU 的描述。
FJP13009 Series 400 V CE Breakdown 12 A NPN Power Transistor - TO-220
1mA 400V 100W 12A 6@8A5V 4MHz 3V@12A3A NPN +150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
Bipolar Transistors - BJT NPN Sil Transistor
Trans GP BJT NPN 400V 12A 100000mW 3-Pin(3+Tab) TO-220 Tube
High-Voltage Fast-Switching NPN Power Transistor
onsemi NPN Transistor, TO-220, TH, 12A, 400V
TRANSISTOR, NPN, 12A 400V TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency Typ ft:4MHz; Power Dissipation Pd:100W; DC Collector Current:12A; DC Current Gain hFE:8; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:3V; Current Ic Continuous a Max:12A; Gain Bandwidth ft Typ:4MHz; Hfe Min:6; Package / Case:TO-220; Power Dissipation Pd:100W; Termination Type:Through Hole; Transistor Type:Switching
The FJP13009 is a 700 V, 12 A NPN silicon epitaxial planar transistor. The FJP13009 is available with multiple hFE bin classes for ease of design use. The FJP13009 is designed for high speed switching applications which utilizes the industry standard TO-220 package offering flexibility in design and excellent power dissipation.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Collector Base Voltage (VCBO)700 V
Collector Emitter Breakdown Voltage400 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)400 V
Current Rating12 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)9 V
Frequency4 MHz
Gain Bandwidth Product4 MHz
hFE Min6
Max Collector Current12 A
Max Frequency4 MHz
Max Operating Temperature150 °C
Max Power Dissipation100 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation100 W
Schedule B8541290080
Transition Frequency4 MHz
Voltage Rating (DC)400 V
Dimensions
Height16.51 mm
Length10.67 mm
Width4.83 mm
合规
环境分类
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
合规声明