备用零件
Price @ 1000
$ 0.336
$ 0.421
Stock
903,685
324,396
Authorized Distributors
6
6
Mount
Through Hole
-
Case/Package
SOT-32
TO-225
Polarity
PNP
PNP
Collector Emitter Breakdown Voltage
100 V
100 V
Max Collector Current
4 A
4 A
Transition Frequency
10 MHz
-
Collector Emitter Saturation Voltage
2.5 V
2.5 V
hFE Min
750
750
Power Dissipation
40 W
40 W
供应链
Country of OriginIndia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
描述
由其分销商提供的 STMicroelectronics BD682 的描述。
Transistor: PNP; bipolar; -100V; -4A; 14W; -65+150 deg.C; THT; TO126
TRANSISTOR, DARLINGTON, PNP, POWER, SWITCH, VO -100V, VI -5V, IO -4A, PD 40W, SOT-32
PLASTIC MEDIUM-POWER SILICON PNP DARLINGTON TRANSISTOR Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
BD6xxx Series PNP 80 V 4 A Complementary Power Darlington Transistor - SOT-32
Trans Darlington PNP 100V 4A 40000mW 3-Pin(3+Tab) SOT-32 Tube
Darlington Transistor, PNP, 100 V, 40 W, 4 A, SOT-32, 3 Pins
Transistor, Pnp, -100V, -4A, Sot32; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:-100V; Transition Frequency Ft:-; Power Dissipation Pd:40W; Dc Collector Current:-4A; Dc Current Gain Hfe:750Hfe; Transistor Case Rohs Compliant: Yes |Stmicroelectronics BD682
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageSOT-32
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage2.5 V
Collector Emitter Voltage (VCEO)100 V
Continuous Collector Current4 A
Current Rating-4 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min750
Max Breakdown Voltage100 V
Max Collector Current4 A
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingBulk
PolarityPNP
Power Dissipation40 W
Transition Frequency10 MHz
Voltage Rating (DC)-100 V
Dimensions
Height10.8 mm
Length7.8 mm
Width2.7 mm