STMicroelectronics BD681

Name: STMicroelectronics BD681
Brand: STMicroelectronics
SKU: BD681

Bipolar junction transistor, NPN, 4 A, 100 ## Fehler ##, THT, TO-126, BD681

$ 0.349

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Distributor		SKU		Min
Avnet		BD681	65,128	1	0.170	0.162	0.159	0.159	0.159	6d
Newark		BD681	6,948	1	1.170	0.618	0.467	0.305	0.230
Arrow Electronics	2	BD681	269,843	1	0.772	0.596	0.466	0.349	0.182
Verical	2	BD681	267,804	43			0.469	0.351	0.183
TME	2	BD681-ST	5,415	1	1.000	0.662	0.405	0.305	0.261	16h

数据表和文档

下载 STMicroelectronics BD681 的数据表和制造商文档。

IHS

Datasheet12 页20 年前

Future Electronics

Burklin Elektronik

RS (Formerly Allied Electronics)

iiiC

库存历史记录

3 个月趋势:

-18.97%

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备用零件

此零件

备用零件

STMicroelectronicsBD681

onsemiBD681G

Price @ 1000

$ 0.349

$ 0.457

Stock

1,926,674

656,753

Authorized Distributors

Mount

Through Hole

Case/Package

SOT-32

TO-225

Polarity

NPN

Collector Emitter Breakdown Voltage

100 V

Max Collector Current

4 A

Transition Frequency

10 MHz

Collector Emitter Saturation Voltage

2.5 V

hFE Min

750

Power Dissipation

40 W

供应链

Country of OriginIndia

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1980-01-04

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 STMicroelectronics BD681 的描述。

Bipolar junction transistor, NPN, 4 A, 100 ## Fehler ##, THT, TO-126, BD681

Burklin Elektronik

Transistor: NPN; bipolar; 100V; 4A; 40W; -65+150 deg.C; THT; TO126

Maritex

TRANSISTOR, DARLINGTON, NPN, POWER, SWITCH, VO 100V, VI 5V, IO 4A, PD 40W, SOT-32

RS (Formerly Allied Electronics)

COMPLEMENTARY POWER DARLINGTON TRANSISTOR Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

ComSIT Distribution GmbH

BD6xxx Series PNP 80 V 4 A Complementary Power Darlington Transistor - SOT-32

Future Electronics

Trans Darlington NPN 100V 4A 40000mW 3-Pin(3+Tab) TO-225 Box / TRANS NPN DARL 100V 4A SOT-32

Win Source

DARLINGTON TRANS, NPN, 100V, 4A, SOT-32; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:40W; DC Collector Current:4A; RF Transistor Case:SOT-32; No. of Pins:3Pins; DC Current Gain hFE:750hFE RoHS Compliant: Yes

Newark