供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2014-01-23
LTD Date2014-07-23
相关零件
onsemiKSE3055TTU
Small Signal Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB
描述
由其分销商提供的 STMicroelectronics BD535 的描述。
Tube Through Hole NPN Single Bipolar (BJT) Transistor 25 @ 2A 2V 100muA 50W 12MHz
Transistor GP BJT NPN 60V 8A 3-Pin (3+Tab) TO-220 Tube
Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
8 A 60 V NPN Si POWER TRANSISTOR TO-220AB
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage800 mV
Collector Emitter Voltage (VCEO)60 V
Current Rating8 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Gain Bandwidth Product12 MHz
hFE Min25
Max Collector Current8 A
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation50 W
Transition Frequency12 MHz
Voltage Rating (DC)60 V