onsemi D44H8

Name: onsemi D44H8
Brand: onsemi
SKU: D44H8

Tube Through Hole NPN Single Bipolar (BJT) Transistor 40 @ 4A 1V 10A 60W 50MHz

Production

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Farnell	2	D44H8...	0	1		1.477*	1.477*	0.473*	0.473*	0.473*	18h
Microchip USA		D44H8	420	150	Tray				10.725	10.725	10h
Component Stockers USA		D44H8	6,997			0.510	0.450	0.420	0.380	0.380	>1wk
ZTZ Technology Limited		D44H8	4,100			0.010	0.010	0.010	0.010	0.010	4d
Quest		D44H8	355			1.236	1.030	0.577	0.515	0.515	17h

数据表和文档

下载 onsemi D44H8 的数据表和制造商文档。

Upverter

Datasheet5 页14 年前

Datasheet5 页18 年前

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IHS

Newark

Farnell

CAD 模型

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onsemiD44H8

onsemiD44H8G

Price @ 1000

$ 0.479

Stock

16,205

142,189

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220

Polarity

NPN

Collector Emitter Breakdown Voltage

60 V

Max Collector Current

8 A

10 A

Transition Frequency

50 MHz

Collector Emitter Saturation Voltage

1 V

hFE Min

Power Dissipation

50 W

2 W

供应链

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1994-01-01

Lifecycle StatusProduction (Last Updated: 1 week ago)

LTB Date2009-12-19

LTD Date2010-06-19

描述

由其分销商提供的 onsemi D44H8 的描述。

Tube Through Hole NPN Single Bipolar (BJT) Transistor 40 @ 4A 1V 10A 60W 50MHz

Fly-Wing Technology

NPN POWER AMPLIFIER Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

ComSIT Distribution GmbH

Power Bipolar Transistor, NPN, 10 A, 60 V

onsemi

Trans GP BJT NPN 60V 8A 3-Pin(3+Tab) TO-220AB Rail

Avnet

Bipolar Transistor; Transistor Polarity:NPN; Power Dissipation, Pd:60W; DC Current Gain Min (hfe):40; Package/Case:TO-220; C-E Breakdown Voltage:60V; DC Collector Current:8A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes

Newark

TRANSISTOR, NPN, 8A 60V TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 60W; DC Collector Current: 10A; DC Current Gain hFE: 40hFE; Transistor Ca

Farnell

TRANSISTOR, NPN, 8A 60V TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Power Dissipation Pd:60mW; DC Collector Current:8A; DC Current Gain hFE:60; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:1V; Current Ic Continuous a Max:8A; Gain Bandwidth ft Typ:50MHz; Hfe Min:40; Package / Case:TO-220; Power Dissipation Pd:60mW; Termination Type:Through Hole; Transistor Type:Power

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