供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-11-23
Lifecycle StatusObsolete (Last Updated: 3 weeks ago)
LTB Date2012-06-29
LTD Date2012-12-29
相关零件
Toshiba2SC5198-O(Q)
Power Bipolar Transistor, 10A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, 3 Pin
描述
由其分销商提供的 STMicroelectronics 2STC4467 的描述。
Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
High power NPN epitaxial planar bipolar transistor
NPN Transistor, 1.5V@300mA, 3A, 10μA, 120V, 8A, TO-3P, TH
Trans GP BJT NPN 120V 8A 80000mW 3-Pin(3+Tab) TO-3P Tube
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)120 V
Collector Emitter Breakdown Voltage120 V
Collector Emitter Voltage (VCEO)120 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency20 MHz
Gain Bandwidth Product20 MHz
hFE Min70
Max Breakdown Voltage120 V
Max Collector Current8 A
Max Frequency20 MHz
Max Operating Temperature150 °C
Max Power Dissipation80 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation80 W
Schedule B8541290080
Transition Frequency20 MHz