onsemi FJA3835TU
$ 0.728
Obsolete
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-01-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2010-05-10
LTD Date2010-05-10
描述
由其分销商提供的 onsemi FJA3835TU 的描述。
Tube Through Hole NPN Bipolar (BJT) Transistor 120 @ 3A 4V 8A 80W 30MHz
NPN EPITAXIAL SILICON TRANSISTOR Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 120V 8A 3-Pin(3+Tab) TO-3P(N) Rail
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)700 V
Collector Emitter Breakdown Voltage120 V
Collector Emitter Voltage (VCEO)120 V
Current Rating8 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)8 V
Frequency30 MHz
Gain Bandwidth Product4 MHz
hFE Min120
Max Collector Current8 A
Max Operating Temperature150 °C
Max Power Dissipation80 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation80 W
Transition Frequency30 MHz
Voltage Rating (DC)120 V