描述
由其分销商提供的 ROHM QH8MA4TCR 的描述。
Transistor MOSFET Array N-CH/P-CH 30V ±9A/±8A 8-Pin TSMT Emboss T/R
Avnet Japan
2.6W 20V 2.5V@1mA 15.5nC@ 10V N+PChannel 30V 16mΩ@ 9A,10V 9A，8A 640pF@15V TSMT-8 SMD mount
Power Field-Effect Transistor, 30V, 0.016ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N AND P-CH, 30V, 9A, TSMT8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0123ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 2.6W; Transistor Case Style: TSMT; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
制造商别名
ROHM 在全球拥有多个品牌，分销商可将其用作替代名称。ROHM 也可称为以下名称：
- Rohm Semiconductor
- ROHM CO LTD
- RHOM
- ROH
- RHM
- ROHM ELECTRONICS
- ROM
- ROMH
- ROHS
- ROHN
- ROHM SEMI
- ROHM Semicon
- ROHM CORPORATION
- ROHM CORP
- MIYA
- Rohm Company Limited
- ROHM CO
- ROHM ELEC
- ROHM Semiconductors
- ROHM ELECTRO
- ROHM SEMICONDUCTOR(VA)
- ROHM COMPANY LTD
- ROHM INC
- ROHM/MISC
- ROHM/NONE
技术规格
Physical
Case/PackageSMD/SMT
MountSurface Mount
Number of Pins2
Number of Terminals8
Technical
Continuous Drain Current (ID)8 A
Drain to Source Resistance16 mΩ
Drain to Source Voltage (Vds)30 V
Input Capacitance640 pF
Max Power Dissipation1.5 W
Min Breakdown Voltage30 V
Number of Elements2
Rds On Max16 mΩ