Vishay SI5403DC-T1-GE3

Name: Vishay SI5403DC-T1-GE3
Brand: Vishay
SKU: SI5403DC-T1-GE3

P-Channel 30 V 0.03 Ohms Surface Mount Power Mosfet - SMD-8

$ 0.507

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	01AC4999	2,310	1		1.970	1.250	0.815	0.815	0.815	1d
Newark	2	SI5403DC-T1-GE3	2,310	1	Cut Tape	1.620	1.020	0.682	0.536	0.536
Verical	2	SI5403DC-T1-GE3	3,000	3K						0.381
Arrow Electronics	2	SI5403DC-T1-GE3	1,875	1		0.420	0.416	0.409	0.398	0.398
Future Electronics		SI5403DC-T1-GE3	24,000	3K	Tape & Reel					0.665

数据表和文档

下载 Vishay SI5403DC-T1-GE3 的数据表和制造商文档。

Upverter

Datasheet11 页2 年前

Newark

IHS

库存历史记录

3 个月趋势:

+5.06%

CAD 模型

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供应链

Country of OriginUSA

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-07-29

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Vishay SI5403DC-T1-GE3 的描述。

P-Channel 30 V 0.03 Ohms Surface Mount Power Mosfet - SMD-8

Future Electronics

Trans MOSFET P-CH 30V 6A 8-Pin Chip FET T/R

Verical

30V 6A 30mΩ@10V,7.2A 6.3W P Channel ChipFET1206-8 MOSFETs ROHS

Dasenic

Small Signal Field-Effect Transistor, 6A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Semicontronic

2.5W(Ta),6.3W(Tc) 20V 3V@ 250¦ÌA 42nC@ 10 V 1P 30V 30m¦¸@ 7.2A,10V 6A 1.34nF@15V 3.05mm*1.65mm*1.14mm

UnikeyIC

MOSFET, P-CH, -30V, 6A, CHIFFET; Transistor Polarity: P Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 6.3W; Transistor Case Style: ChipFET; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)

Farnell