价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | DTC113ZUAT106 | 5,000 | 500 | |||||||||
| Arrow Electronics | DTC113ZUAT106 | 284,762 | 1 | |||||||||
| TTI | DTC113ZUAT106 | 0 | 3K | Tape & Reel | 17h | |||||||
| Future Electronics | DTC113ZUAT106 | 0 | 3K | Tape & Reel | ||||||||
| Farnell | DTC113ZUAT106 | 0 | 3K | 1d |
备用零件
Price @ 1000
$ 0.037
$ 0.073
$ 0.073
Stock
1,517,464
100,894
100,894
Authorized Distributors
5
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-323
-
-
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
-
-
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
250 MHz
250 MHz
250 MHz
Collector Emitter Saturation Voltage
300 mV
-
-
hFE Min
33
33
33
Power Dissipation
200 mW
-
-
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描述
由其分销商提供的 ROHM DTC113ZUAT106 的描述。
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
DTC113ZUA Series 50 V 100 mA Surface Mount NPN Digital Transistor - SC-70
Trans Digital BJT NPN 50V 100mA 3-Pin UMT T/R
300mV@ 500¦ÌA,10mA NPN - Pre-Biased 200mW 500nA 50V 100mA SOT 2mm*1.25mm*800¦Ìm
TRANSISTOR; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 1kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: -;
TRANSISTOR;DIGITAL;UMT;NPN; Transistor Type:General Purpose; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:100mA; Power Dissipation:200mW; Min Hfe:33; ft, Typ:250MHz; Case ;RoHS Compliant: Yes
Transistor; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:1kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:-; RF Transistor Case:SOT-323; No. of Pins:3 Pin; Product Range:DTC113Z Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (15-Jan-2018); Current Ic Continuous a Max:100mA; DC Collector Current:100mA; DC Current Gain hFE:33hFE; Gain Bandwidth ft Typ:250MHz; Hfe Min:33; No. of Pins:3Pins; Operating Temperature Max:150°C; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Pd:200mW; Termination Type:Surface Mount Device; Transistor Case Style:SOT-323; Transistor Polarity:NPN; Transistor Type:General Purpose; Transition Frequency ft:250MHz
制造商别名
ROHM 在全球拥有多个品牌，分销商可将其用作替代名称。ROHM 也可称为以下名称：
- Rohm Semiconductor
- ROHM CO LTD
- RHOM
- ROH
- RHM
- ROHM ELECTRONICS
- ROM
- ROMH
- ROHS
- ROHN
- ROHM SEMI
- ROHM Semicon
- ROHM CORPORATION
- ROHM CORP
- MIYA
- Rohm Company Limited
- ROHM CO
- ROHM ELEC
- ROHM Semiconductors
- ROHM ELECTRO
- ROHM SEMICONDUCTOR(VA)
- ROHM COMPANY LTD
- ROHM INC
- ROHM/MISC
- ROHM/NONE
技术规格
Physical
Case/PackageSOT-323
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationSingle
hFE Min33
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Number of Elements1
Operating Supply Voltage50 V
PackagingTape & Reel
PolarityNPN
Power Dissipation200 mW
TerminationSMD/SMT
Transition Frequency250 MHz
Voltage Rating (DC)50 V