备用零件
此零件
备用零件
Price @ 1000
$ 0.268
$ 0.35
Stock
147,344
229,865
Authorized Distributors
2
4
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
100 V
100 V
Max Collector Current
3 A
3 A
Transition Frequency
3 MHz
3 MHz
Collector Emitter Saturation Voltage
1.2 V
1.2 V
hFE Min
10
10
Power Dissipation
2 W
40 W
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2019-07-31
LTD Date2020-01-31
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
描述
由其分销商提供的 onsemi TIP31CTU 的描述。
TIP Series NPN 40 W 100 V 3 A Flange Mount Epitaxial Silicon Transistor-TO-220-3
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor GP BJT NPN 100V 3A 3-Pin TO-220AB Rail
Trans GP BJT NPN 100V 3A 2000mW 3-Pin(3+Tab) TO-220 Tube
Bipolar Transistors - BJT NPN Epitaxial Sil
TRANSISTOR, BIPOL, NPN, 100V, TO-220AB-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 40W; DC Collector Current: 3A; DC Current Gain hFE: 10hFE; Tran
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.214 g
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage1.2 V
Collector Emitter Voltage (VCEO)100 V
Current Rating3 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency3 MHz
Gain Bandwidth Product3 MHz
hFE Min10
Max Breakdown Voltage100 V
Max Collector Current3 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation2 W
Schedule B8541290080
Transition Frequency3 MHz
Voltage Rating (DC)100 V
Dimensions
Height20.4 mm
Length6.35 mm
Width6.35 mm