供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-09-24
Lifecycle StatusObsolete (Last Updated: 4 months ago)
相关零件
onsemiIRLR130ATM
Tape & Reel (TR) Surface Mount N-Channel MOSFET (Metal Oxide) Mosfet Transistor 13A Tc 2.5W Ta 46W Tc 100V -55C~150C TJ
InfineonIRFR9120NTRPBF
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.48Ohm;ID -6.6A;D-Pak (TO-252AA);PD 40W
onsemiHUF76609D3S
10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | MOSFET N-CH 100V 10A DPAK
描述
由其分销商提供的 onsemi SFR9110TF 的描述。
MOSFET P-CH 100V 2.8A DPAK
MOSFETs PCh/100V/2.8a/1.2Ohm
Power Field-Effect Transistor, 2.8A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
P-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)2.8 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance335 pF
Max Operating Temperature150 °C
Max Power Dissipation20 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max1.2 Ω
Rise Time20 ns
Turn-Off Delay Time25 ns