供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusObsolete (Last Updated: 6 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)
描述
由其分销商提供的 onsemi SFP9530 的描述。
P-Channel 100 V 0.3 Ohm Flange Mount Advanced Power Mosfet - TO-220-3
Trans MOSFET P-CH 100V 10.5A 3-Pin(3+Tab) TO-220AB Rail
P-CHANNEL ADVANCED POWER MOSFET Power Field-Effect Transistor, 10.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
66W(Tc) 30V 4V@ 250µA 38nC@ 10V 1individualPChannel 100V 300mΩ@ 5.3A,10V 10.5A 1.035nF@25V TO-220-3 Through hole mounting 9.4mm(height)
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)10.5 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance300 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.035 nF
Max Operating Temperature175 °C
Max Power Dissipation66 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation66 W
Rds On Max300 mΩ
Resistance300 mΩ
Rise Time22 ns
Turn-Off Delay Time45 ns
Turn-On Delay Time13 ns