供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-10-18
Lifecycle StatusObsolete (Last Updated: 1 week ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
相关零件
InfineonIRF9530NPBF
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.2Ohm;ID -14A;TO-220AB;PD 79W;VGS +/-20V
描述
由其分销商提供的 onsemi FQP12P10 的描述。
P-Channel Power MOSFET, QFET®, -100 V, -11.5 A, 290 mΩ, TO-220
Trans MOSFET P-CH 100V 11.5A 3-Pin(3+Tab) TO-220AB Rail
Transistor, mosfet, p-Channel,100V V(Br)Dss,11.5A I(D),to-220Ab Rohs Compliant: Yes |Onsemi FQP12P10
Power Field-Effect Transistor, 11.5A I(D), 100V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, P TO-220; Transistor Polarity: P Channel; Continuous Drain Current Id: 11.5A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.29ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for lowvoltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)11.5 A
Current Rating-11.5 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance290 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance800 pF
Max Operating Temperature175 °C
Max Power Dissipation75 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation75 W
Rds On Max290 mΩ
Rise Time160 ns
Schedule B8541290080
Turn-Off Delay Time35 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)-100 V