onsemi RFD16N05LSM9A

N-Channel 50 V 16 A 0.047 Ohm Surface Mount Power Mosfet - TO-252AA

N-Channel Logic Level Power MOSFET 50V, 16A, 47mΩ

Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

MOSFET, N-CH, 50V, 16A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:50V; On Resistance Rds(on):0.047ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Pow

These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09871.