onsemi PZT2222AT1G

Transistor General Purpose BJT NPN 40 Volt 0.6A Automotive 4-Pin(3+Tab) SOT-223

TRANSISTOR, BIPOLAR, SI, NPN, SWITCHING, VCEO 40VDC, IC 600MA, PD 1.5W, SOT-223,HFE 40

Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 600 mA, 1.5 W, SOT-223, Surface Mount

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA

PZT2222A Series 40 V 600 mA NPN Silicon Planar Epitaxial Transistor - SOT-223

Bipolar Transistors - BJT 600mA 75V NPN

General Purpose Transistors NPN Ic=600mA Vceo=40V hfe=100~300 P=1.5W SOT223

This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.

TRANSISTOR, NPN, SOT-223; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 1.5W; DC Collector Current: 600mA; DC Current Gain hFE: 300hFE; Transistor Cas

Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 600 / Collector-Emitter Voltage (Vceo) V = 40 / DC Current Gain (hFE) = 35 / Collector-Base Voltage (Vcbo) V = 75 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 300 / Power Dissipation (Pd) W = 1.5 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 2 / Reflow Temperature Max. °C = 260