onsemi NVF3055L108T1G

Name: onsemi NVF3055L108T1G
Brand: onsemi
SKU: NVF3055L108T1G

Single N-Channel Logic Level Power MOSFET 60V, 3A, 120mΩ Automotive Version of the NTF3055L108

$ 0.445

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet		NVF3055L108T1G	37,000	1K					0.397	0.372	3d
Newark	2	NVF3055L108T1G	617	1	Cut Tape	1.500	0.923	0.735	0.735	0.735
Verical	2	NVF3055L108T1G	870	708					0.489	0.436
Future Electronics	2	NVF3055L108T1G	851,000	1K	Tape & Reel				0.535	0.520
Master Electronics		NVF3055L108T1G	4,940	50				0.821	0.420	0.395

数据表和文档

下载 onsemi NVF3055L108T1G 的数据表和制造商文档。

IHS

Datasheet9 页6 年前

Upverter

Newark

TME

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

+46.48%

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供应链

Country of OriginMalaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-10-03

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi NVF3055L108T1G 的描述。

Single N-Channel Logic Level Power MOSFET 60V, 3A, 120mΩ Automotive Version of the NTF3055L108

onsemi

NVF3055L108T1G N-CHANNEL MOSFET TRANSISTOR, 3 A, 60 V, 3 + TAB-PIN SOT-223

RS (Formerly Allied Electronics)

N-Channel 60 V 120 mOhm 1.3 W Surface Mount Power Mosfet - SOT-223

Future Electronics

Power Field-Effect Transistor, 3A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

IHS

Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:5V; Gate Source Threshold Voltage Max:1.68V; Power Dissipation:2.1W; No. Of Pins:4Pins Rohs Compliant: Yes |Onsemi NVF3055L108T1G.

Newark