备用零件
Price @ 1000
$ 0.071
$ 0.115
$ 0.115
Stock
7,247,331
2,073,146
2,073,146
Authorized Distributors
6
6
6
Mount
-
Surface Mount
Surface Mount
Case/Package
SOT-323
SOT-323
SOT-323
Drain to Source Voltage (Vdss)
-20 V
-20 V
-20 V
Continuous Drain Current (ID)
1.37 A
1.5 A
1.5 A
Threshold Voltage
-640 mV
-600 mV
-600 mV
Rds On Max
120 mΩ
100 mΩ
100 mΩ
Gate to Source Voltage (Vgs)
8 V
12 V
12 V
Power Dissipation
329 mW
350 mW
350 mW
Input Capacitance
840 pF
627 pF
627 pF
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-09-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
onsemiNVF2201NT1G
Small Signal MOSFET 20V 300mA 1 Ohm Single N-Channel SC70 Small Signal MOSFET 20V 300mA 1 Ohm Single N-Channel SC-70
描述
由其分销商提供的 onsemi NTS4101PT1G 的描述。
NTS4101PT1G P-CHANNEL MOSFET TRANSISTOR, 1.37 A, 20 V, 3-PIN SOT-23
NTS4101P: Small Signal MOSFET 20V 1.37A 120 mOhm Single P-Channel SC-70
Single P-Channel Power MOSFET -20V, -1.37A, 120mΩ
P-Channel 20 V 83 mOhm 329 mW Surface Mount Power MOSFET - SOT-323
-20 V, -1.37 A, SINGLE P-CHANNEL, SC-70 POWER MOSFET Small Signal Field-Effect Transistor, 1.37A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
P Channel Mosfet, -20V, 1.37A, Sot-323; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:1.37A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:640Mv Rohs Compliant: Yes |Onsemi NTS4101PT1G.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-323
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)1.37 A
Current Rating-1.37 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance120 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time14.9 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance840 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation329 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation329 mW
Rds On Max120 mΩ
Resistance83 MΩ
Rise Time14.9 ns
Schedule B8541210080
Threshold Voltage-640 mV
Turn-Off Delay Time26 ns
Turn-On Delay Time6.2 ns
Voltage Rating (DC)-20 V
Dimensions
Height1 mm
Length2.2 mm
Width1.35 mm