价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | NTMS4700NR2G | 5,000 | 1140 | |||||||||
| Rochester Electronics | NTMS4700NR2G | 5,000 | 21h | |||||||||
| Microchip USA | NTMS4700NR2G | 265 | 3500 | Tray | 13h | |||||||
| Win Source | WS-261345 | 9,300 | 50 | 22h | ||||||||
| Worldway Electronics | NTMS4700NR2G | 29,117 | 7 | Tape & Reel | 21h |
备用零件
Price @ 1000
$ 0.263
$ 0.604
Stock
180,159
273,071
Authorized Distributors
2
2
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOIC
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
8.6 A
8.6 A
Threshold Voltage
-
-
Rds On Max
7.2 mΩ
7.2 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
860 mW
1.56 W
Input Capacitance
1.6 nF
1.6 nF
相关零件
InfineonBSO083N03MSGXUMA1
Small Signal Field-Effect Transistor, 9.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
描述
由其分销商提供的 onsemi NTMS4700NR2G 的描述。
Trans MOSFET N-CH 30V 11.5A 8-Pin SOIC N T/R
MOSFETs- Power and Small Signal 30V 14.5A N-Channel
Small Signal Field-Effect Transistor, 8.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Tape & Reel (TR) Surface Mount N-Channel SINGLE WITH BUILT-IN DIODE Mosfet Transistor 8.6A Ta 8.6A 1.56W 5ns
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)8.6 A
Current Rating14.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance10 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.6 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation860 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation860 mW
Rds On Max7.2 mΩ
Rise Time5 ns
Turn-Off Delay Time29.5 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)30 V
Dimensions
Height1.75 mm