供应链
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-12-18
Lifecycle StatusObsolete (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)
相关零件
onsemiNTMFS6B14NT1G
ON SEMICONDUCTOR NTMFS6B14NT1G MOSFET Transistor, N Channel, 50 A, 100 V, 0.0122 ohm, 10 V, 4 V
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描述
由其分销商提供的 onsemi NTMFS6B05NT1G 的描述。
Single N−Channel Power MOSFET 100V, 104A, 8mΩ Power MOSFET 100 V, 7.7 mΩ, 104 A, Single N−Channel
NTMFS6B05NT1G N-CHANNEL MOSFET TRANSISTOR, 104 A, 100 V, 8-PIN SO-8FL
ON SEMICONDUCTOR NTMFS6B05NT1G MOSFET Transistor, N Channel, 104 A, 100 V, 0.0065 ohm, 10 V, 4 V
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:104A; On Resistance Rds(On):0.0065Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
N CHANNEL MOSFET, 100V, DFN-5; Transistor Polarity: N Channel; Continuous Drain Current Id: 104A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 138W; Transistor Case Style: DFN; No. of Pins: 5Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageDFN
Contact PlatingTin
MountSurface Mount
Number of Terminals5
Technical
Continuous Drain Current (ID)16 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.1 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation138 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.3 W
Rds On Max8 mΩ
Rise Time43 ns
Threshold Voltage4 V
Turn-Off Delay Time39 ns
Turn-On Delay Time14 ns
Dimensions
Height1.1 mm
Length6.1 mm
Width5.1 mm