价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | DMP32D4SFB-7B | 6,215 | 5 | Cut Tape | ||||||||
| Arrow Electronics | DMP32D4SFB-7B | 5,847 | 2288 | |||||||||
| Verical | DMP32D4SFB-7B | 5,847 | 2288 | |||||||||
| DigiKey | DMP32D4SFB-7BDICT-ND | 6,617 | 1 | Cut Tape | ||||||||
| TME | DMP32D4SFB-7B | 0 | 1 | 12h |
数据表和文档
下载 Diodes Inc. DMP32D4SFB-7B 的数据表和制造商文档。
官方数据表7 年前
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-04-02
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
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Mosfet, N-Ch, 60V, 0.54A, X1-Dfn1212 Rohs Compliant: Yes |Diodes Inc. DMN62D0SFD-7
Diodes Inc.DMN3900UFA-7B
Mosfet, N-Ch, 30V, 0.55A, X2-Dfn0806 Rohs Compliant: Yes |Diodes Inc. DMN3900UFA-7B
Diodes Inc.DMN62D0LFD-7
Mosfet, N-Ch, 60V, 0.31A, X1-Dfn1212 Rohs Compliant: Yes |Diodes Inc. DMN62D0LFD-7
描述
由其分销商提供的 Diodes Inc. DMP32D4SFB-7B 的描述。
Mosfet, P-Ch, 30V, 0.4A, Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMP32D4SFB-7B
Trans MOSFET P-CH 30V 0.5A Automotive 3-Pin X1-DFN T/R
500mW(Ta) 20V 2.3V@ 250¦ÌA 1.3nC@ 10 V 1P 30V 2.4¦¸@ 200mA,10V 400mA 51pF@15V DFN 1.08mm*480¦Ìm
DMP32 Series 30 V 500 mW 400 mA P-Channel MOSFET X1-DFN1006-3
Small Signal Field-Effect Transistor, 0.5A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
P-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS
Diodes Inc SCT
场效应管, MOSFET, P沟道, 30V, 0.4A, DFN1006;
制造商别名
Diodes Inc. 在全球拥有多个品牌，分销商可将其用作替代名称。Diodes Inc. 也可称为以下名称：
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
技术规格
Physical
Case/PackageDFN
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)500 mA
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance2.4 Ω
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time20.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance51 pF
Max Operating Temperature150 °C
Max Power Dissipation1.2 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max2.4 Ω
Rise Time8.5 ns
Schedule B8541290080
Turn-Off Delay Time31.3 ns
Turn-On Delay Time3.6 ns
Dimensions
Height480 µm
Length1.08 mm
Width675 µm