供应链
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-03-14
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
onsemiNTMFS5C430NLT1G
Single N−Channel Power MOSFET 40V, 200A, 1.4mΩ Power MOSFET 40 V, 1.5 mohm, 200 A, Single N-Channel
onsemiNTMFS5C423NLT1G
Single N−Channel Power MOSFET 40 V, 150 A, 2.0mΩ Power MOSFET 40 V, 2.0 mΩ, 150 A, Single N−Channel
onsemiNVMFS5C423NLT1G
ON SEMICONDUCTOR NVMFS5C423NLT1G MOSFET Transistor, N Channel, 150 A, 40 V, 0.0016 ohm, 10 V, 2 V
Diodes Inc.DMN4020LFDE-7
Mosfet, N-Ch, 40V, 8A, U-Dfn2020 Rohs Compliant: Yes |Diodes Inc. DMN4020LFDE-7
Diodes Inc.DMN32D2LFB4-7
Mosfet, N-Ch, 30V, 0.3A, X2-Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMN32D2LFB4-7
Diodes Inc.DMP32D4SFB-7B
Mosfet, P-Ch, 30V, 0.4A, Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMP32D4SFB-7B
描述
由其分销商提供的 onsemi NTMFS5H409NLT1G 的描述。
Trans MOSFET N-CH 40V 41A 5-Pin(4+Tab) SO-FL T/R
MOSFET, N-CH, 40V, 270A, DFN-5
Power Field-Effect Transistor, 270A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N-CH, 40V, 270A, DFN-5; Transistor Polarity: N Channel; Continuous Drain Current Id: 270A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 850µohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageDFN
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)270 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.6 mΩ
Drain to Source Voltage (Vdss)40 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.7 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation140 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.2 W
Rds On Max1.1 mΩ
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time40 ns
Turn-On Delay Time17 ns
Dimensions
Height1.1 mm