价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | NTHS4501NT1 | 3,000 | 2104 | |||||||||
| Rochester Electronics | NTHS4501NT1 | 3,000 | 17h | |||||||||
| Microchip USA | NTHS4501NT1 | 206 | 3500 | Tray | 9h | |||||||
| Win Source | WS-NTHS4501NT1 | 4,000 | 235 | 18h | ||||||||
| Worldway Electronics | NTHS4501NT1 | 11,524 | 7 | Tape & Reel | 16h |
备用零件
Price @ 1000
$ 0.143
$ 0.175
Stock
134,053
2,033,447
Authorized Distributors
2
3
Mount
Surface Mount
Surface Mount
Case/Package
SMD/SMT
SMD/SMT
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
4.9 A
4.9 A
Threshold Voltage
-
-
Rds On Max
38 mΩ
38 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
1.3 W
1.3 W
Input Capacitance
462 pF
462 pF
相关零件
onsemiMCH6341-TL-W
Single P-Channel Power Mosfet, -30V, -5A, 59M/Reel Rohs Compliant: Yes |Onsemi MCH6341-TL-W
描述
由其分销商提供的 onsemi NTHS4501NT1 的描述。
MOSFETs- Power and Small Signal 30V 6.7A N-Channel No-Cancel/No-Return
Trans MOSFET N-CH 30V 4.9A 8-Pin Chip FET T/R
4900 mA 30 V N-CHANNEL Si SMALL SIGNAL MOSFET
Small Signal Field-Effect Transistor, 4.9A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Tape & Reel (TR) Surface Mount N-Channel SINGLE WITH BUILT-IN DIODE Mosfet Transistor 4.9A Ta 4.9A 1.3W 11ns
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSMD/SMT
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)4.9 A
Current Rating4.9 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance38 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time11 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance462 pF
Max Operating Temperature150 °C
Max Power Dissipation1.3 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation1.3 W
Rds On Max38 mΩ
Rise Time11 ns
Turn-Off Delay Time17 ns
Voltage Rating (DC)30 V