价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | NTD4809NHT4G | 10,000 | 1244 | |||||||||
| Rochester Electronics | NTD4809NHT4G | 142,167 | 22h | |||||||||
| Microchip USA | NTD4809NHT4G | 369 | 3500 | Tray | 5d | |||||||
| Win Source | WS-NTD4809NHT4G | 14,039 | 185 | 23h | ||||||||
| Worldway Electronics | NTD4809NHT4G | 22,252 | 7 | Tape & Reel | 22h |
备用零件
Price @ 1000
$ 0.241
$ 0.398
Stock
750,067
972,026
Authorized Distributors
2
4
Mount
-
-
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
9 A
9 A
Threshold Voltage
-
-
Rds On Max
9 mΩ
9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2 W
2 W
Input Capacitance
2.155 nF
1.456 nF
供应链
Country of OriginVietnam
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-09-15
Lifecycle StatusObsolete (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
相关零件
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Tube Through Hole N-Channel Single Mosfet Transistor 10.4A Ta 65A Tc 12.6A 2W 2.3ns
描述
由其分销商提供的 onsemi NTD4809NHT4G 的描述。
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 9.6A Ta 58A Tc 11.5A 2W 3ns
Power MOSFET 30V 58A 9 mOhm Single N-Channel DPAK
Trans MOSFET N-CH 30V 11.5A 3-Pin(2+Tab) DPAK T/R
Power Field-Effect Transistor, 9A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageDPAK
Contact PlatingTin
Number of Pins4
Number of Terminals2
Technical
Continuous Drain Current (ID)9 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance12.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.155 nF
Max Operating Temperature175 °C
Max Power Dissipation52 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation2 W
Rds On Max9 mΩ
Resistance9 MΩ
Rise Time18 ns
Turn-Off Delay Time22 ns