备用零件
Price @ 1000
$ 0.186
$ 0.186
$ 0.186
Stock
164,048
617,275
617,275
Authorized Distributors
2
2
2
Mount
-
-
-
Case/Package
TO-251
DPAK
DPAK
Drain to Source Voltage (Vdss)
30 V
30 V
30 V
Continuous Drain Current (ID)
9 A
9 A
9 A
Threshold Voltage
2.1 V
-
-
Rds On Max
9 mΩ
9 mΩ
9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
-
2 W
2 W
Input Capacitance
2.155 nF
2.155 nF
2.155 nF
供应链
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-03-16
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2011-07-24
LTD Date2012-01-24
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
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描述
由其分销商提供的 onsemi NTD4809NH-1G 的描述。
Tube Through Hole N-Channel Single Mosfet Transistor 9.6A Ta 58A Tc 58A 2W 3ns
Power MOSFET 30V 58A 9 mOhm Single N-Channel DPAK
Power MOSFET, N Channel, 30 V, 58 A, 0.009 ohm, TO-251AA, Through Hole
MOSFET, N, 30V, I-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.009ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.1V; Power Dissipation Pd: 52W; Transistor Case Style: TO-251AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 58A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 2.1V; Voltage Vgs Rds on Measurement: 10V
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-251
Contact PlatingTin
Number of Pins4
Number of Terminals3
Technical
Continuous Drain Current (ID)9 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance12.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.155 nF
Max Operating Temperature175 °C
Max Power Dissipation52 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max9 mΩ
Rise Time18 ns
Threshold Voltage2.1 V
Turn-Off Delay Time22 ns