价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | NTD4806N-35G | 11,700 | 1140 | |||||||||
| Rochester Electronics | NTD4806N-35G | 46,050 | 15h | |||||||||
| Microchip USA | NTD4806N-35G | 2,288 | 3500 | Tray | 3d | |||||||
| Component Stockers USA | NTD4806N-35G | 75,819 | >1wk | |||||||||
| Win Source | WS-NTD4806N-35G | 20 | 105 | 16h |
备用零件
Price @ 1000
$ 0.263
$ 0.472
$ 0.472
Stock
323,637
687,219
687,219
Authorized Distributors
2
3
3
Mount
-
-
-
Case/Package
TO-251-3
DPAK
DPAK
Drain to Source Voltage (Vdss)
30 V
30 V
30 V
Continuous Drain Current (ID)
11 A
11 A
11 A
Threshold Voltage
-
-
-
Rds On Max
6 mΩ
6 mΩ
6 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
2.14 W
2.14 W
2.14 W
Input Capacitance
2.142 nF
2.142 nF
2.142 nF
供应链
Country of OriginVietnam
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-04-04
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2014-12-27
LTD Date2015-06-27
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
相关零件
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Tube Through Hole N-Channel Single Mosfet Transistor 10.3A Ta 54A Tc 14A 2.6W 22ns
描述
由其分销商提供的 onsemi NTD4806N-35G 的描述。
Tube Through Hole N-Channel Single Mosfet Transistor 11.3A Ta 79A Tc 76A 2.14W 4.7ns
Power MOSFET 30V 76A 6 mOhm Single N-Channel DPAK
MOSFETs- Power and Small Signal NFET 30V 76A 6MOHM
Trans MOSFET N-CH 30V 15.6A 3-Pin(3+Tab) IPAK Rail
11 A 30 V 0.0094 ohm N-CHANNEL Si POWER MOSFET
Power Field-Effect Transistor, 11A I(D), 30V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 30V 11.3A/79A IPAK
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-251-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance9.4 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time4.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.142 nF
Max Operating Temperature175 °C
Max Power Dissipation68 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.14 W
Rds On Max6 mΩ
Rise Time23.8 ns
Turn-Off Delay Time26 ns