备用零件
Price @ 1000
$ 0.552
$ 0.506
Stock
1,766,978
355,480
Authorized Distributors
6
2
Mount
-
-
Case/Package
DPAK
DPAK
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
8.4 A
8.4 A
Threshold Voltage
1.9 V
1.9 V
Rds On Max
10 mΩ
10 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
75 W
75 W
Input Capacitance
2.4 nF
2.4 nF
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-04-01
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
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描述
由其分销商提供的 onsemi NTD4302T4G 的描述。
Single N-Channel Power MOSFET 30V, 18.5A, 10mΩ
N-Channel 30 V 7.8 mOhm 75 W Tab Mount Power MOSFET - TO-252-3
Trans MOSFET N-CH 30V 11.3A 3-Pin(2+Tab) DPAK T/R
XTR,PWR,MFT,NTD4302,DPK 30V,68A,RDS(on)=0.010-OHM@10V,N-CHANNEL,D-PAK
MOSFETs- Power and Small Signal 30V 68A N-Channel
MOSFET, N CH, 30V, 68A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 68A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0078ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; P
Power Field-Effect Transistor, 8.4A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageDPAK
Number of Pins4
Number of Terminals2
Technical
Continuous Drain Current (ID)8.4 A
Current Rating68 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance10 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.4 nF
Max Operating Temperature150 °C
Max Power Dissipation1.04 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.9 V
Number of Elements1
PackagingTape and Reel
Power Dissipation75 W
Rds On Max10 mΩ
Resistance7.8 MΩ
Rise Time15 ns
Schedule B8541290080
Threshold Voltage1.9 V
Turn-Off Delay Time40 ns
Voltage Rating (DC)30 V