备用零件
Price @ 1000
$ 0.197
$ 0.099
Stock
115,581
169,110
Authorized Distributors
2
2
Mount
-
-
Case/Package
TO-251
DPAK
Drain to Source Voltage (Vdss)
60 V
-
Continuous Drain Current (ID)
9 A
9 A
Threshold Voltage
-
-
Rds On Max
150 mΩ
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
28.8 W
28.8 W
Input Capacitance
280 pF
280 pF
供应链
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2001-06-01
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2010-07-21
LTD Date2011-01-21
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
描述
由其分销商提供的 onsemi NTD3055-150-1G 的描述。
Tube Through Hole N-Channel Single Mosfet Transistor 9A Ta 9A 28.8W 23ns
Single N-Channel Power MOSFET 60V, 9A, 150mΩ
N CHANNEL MOSFET, 60V, 9A, D-PAK; Transi
Trans MOSFET N-CH 60V 9A 3-Pin(3+Tab) IPAK Tube
MOSFETs- Power and Small Signal 60V 9A N-Channel
9 A 60 V 0.15 ohm N-CHANNEL Si POWER MOSFET
Power Field-Effect Transistor, 9A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
NTD3055-150-1G, SINGLE MOSFETS;
Designed for low voltage high speed switching applications in power supplies converters and power motor controls and bridge circuits.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-251
Number of Pins4
Number of Terminals3
Technical
Continuous Drain Current (ID)9 A
Current Rating9 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance150 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time23 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance280 pF
Max Operating Temperature175 °C
Max Power Dissipation28.8 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation28.8 W
Rds On Max150 mΩ
Rise Time37.1 ns
Turn-Off Delay Time12.2 ns
Voltage Rating (DC)60 V