onsemi NDT014L

Name: onsemi NDT014L
Brand: onsemi
SKU: NDT014L

N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 2.8A, 160mΩ

$ 0.503

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Newark	2	NDT014L	1,800	1	Cut Tape	1.610	1.010	0.676	0.531	0.531
Verical	2	NDT014L	4,000	4K						0.396
Arrow Electronics		NDT014L	4,000	4K						0.396
Rochester Electronics		NDT014L	16,293					0.504	0.418	0.373	4h
DigiKey	3	NDT014LCT-ND	19,978	1	Cut Tape	1.660	1.053	0.702	0.503	0.462

数据表和文档

下载 onsemi NDT014L 的数据表和制造商文档。

官方数据表3 年前

库存历史记录

3 个月趋势:

-17.43%

CAD 模型

从我们值得信赖的合作伙伴处下载 onsemi NDT014L 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载
EE Concierge	符号封装

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1996-06-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi NDT014L 的描述。

N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 2.8A, 160mΩ

onsemi

Trans MOSFET N-CH 60V 2.8A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 60V 2.8A SOT-223

Win Source

N-Channel 60 V 0.16 Ohm SMT Enhancement Mode Field Effect Transistor SOT-223

Future Electronics

MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:2.8A; Drain Source Voltage Vds:60V; On Resistance Rds(on):170mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:3W; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (19-Dec-2011); Current Id Max:2.8A; Package / Case:SOT-223; Power Dissipation Pd:3W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:1.5V; Voltage Vgs Rds on Measurement:4.5V

element14 APAC

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.Thesedevices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

Fairchild Semiconductor