Diodes Inc. ZXMP6A13GTA

Name: Diodes Inc. ZXMP6A13GTA
Brand: Diodes Inc.
SKU: ZXMP6A13GTA

Power MOSFET, Enhancement Mode, P Channel, 60 V, 1.7 A, 0.39 ohm, SOT-223, Surface Mount

$ 0.279

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价格与库存

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Distributor		SKU		Min	Pkg
Newark	2	ZXMP6A13GTA	1,066	1	Cut Tape	1.180	0.741	0.485	0.376	0.376
Verical	3	ZXMP6A13GTA	1,000	1K					0.199	0.189
Arrow Electronics	3	ZXMP6A13GTA	2,000	236					0.263	0.263
TME	2	ZXMP6A13GTA	41	1		0.960	0.603	0.439	0.279	0.257	23h
DigiKey	2	ZXMP6A13GCT-ND	345	1	Cut Tape	1.230	0.769	0.505	0.391	0.391

数据表和文档

下载 Diodes Inc. ZXMP6A13GTA 的数据表和制造商文档。

IHS

Datasheet8 页3 年前

Datasheet8 页19 年前

element14 APAC

Newark

Diodes Inc SCT

iiiC

库存历史记录

3 个月趋势:

+46.16%

CAD 模型

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2002-03-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Diodes Inc. ZXMP6A13GTA 的描述。

Power MOSFET, Enhancement Mode, P Channel, 60 V, 1.7 A, 0.39 ohm, SOT-223, Surface Mount

Avnet Silica

ZXMP6A13G Series 60 V 390 mOhm P-Channel Enhancement Mode MOSFET - SOT-223

Future Electronics

MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: P Variants: Enhancement mode Power dissipation: 2 W

Distrelec

MOSFET, P CH, 60V, 1.7A, SOT223; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.39ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1V; P

element14 APAC

Mosfet, P Channel, 60V, 1.7A, Sot223; Transistor, Polaridad:Canal P; Intensidad Drenador Continua Id:-1.7A; Tensión Drenaje-Fuente Vds:-60V; Resistencia De Activación Rds(On):0.39Ohm; Tensión Vgs De Medición Rds(On):-10V |Diodes Inc. ZXMP6A13GTA

Newark