供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1994-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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描述
由其分销商提供的 onsemi NDS9407 的描述。
P-Channel 60 V 150 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
In a Pack of 5, P-Channel MOSFET, 3 A, 60 V, 8-Pin SOIC ON Semiconductor NDS9407
Trans MOSFET P-CH 60V 3A 8-Pin SOIC T/R / MOSFET P-CH 60V 3A 8-SOIC
60V P-Channel PowerTrench® MOSFET -3.0A, 150mΩ
MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):150mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.6V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:-3A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:-1.6V; Voltage Vgs Rds on Measurement:-10V
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V).
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight130 mg
Technical
Continuous Drain Current (ID)3 A
Current Rating-3.3 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance150 mΩ
Drain to Source Voltage (Vdss)-60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance732 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs-1.6 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1 W
Rds On Max150 mΩ
Rise Time11 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-1.6 V
Turn-Off Delay Time10 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)-60 V
Dimensions
Height1.75 mm
Length5 mm
Width4 mm