onsemi NDS8936

Tape & Reel (TR) Surface Mount 2N-Channel (Dual) Dual Mosfet Array 30nC @ 10V 5.3A 900mW 10ns

Trans MOSFET N-CH 30V 5.3A 8-Pin SOIC N T/R

Power Field-Effect Transistor, 5.3A I(D), 30V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

2W 20V 2.8V@ 250µA 30nC@ 10V 2individualNChannel 30V 35mΩ@ 5.3A,10V 5.3A 720pF@15V SOIC-8 SMD mount 4.9mm*3.9mm*1.75mm

Dual N Channel Mosfet, 30V, 5.3A, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.3A; On Resistance Rds(On):0.033Ohm; Transistor Mounting:surface Mount; Threshold Voltage Vgs:1.6Vrohs Compliant: Yes

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.