onsemi NDS8858H

Name: onsemi NDS8858H
Brand: onsemi
SKU: NDS8858H

Trans Mosfet N/p-ch 30V 6.3A/4.8A 8-PIN SOIC N T/r

$ 0.629

Obsolete

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Distributor		SKU		Min	Pkg
Verical	2	NDS8858H	9,841	446					0.699	0.623
Rochester Electronics		NDS8858H	11,833					0.674	0.559	0.499	21h
Win Source		WS-NDS8858H	442	125					0.304	0.273	22h
ICPartonline		NDS8858H	34,870			26.000	24.700	23.400	22.100	20.800	3d
Worldway Electronics		NDS8858H	29,595	7	Tape & Reel		0.158	0.153	0.145	0.145	21h

数据表和文档

下载 onsemi NDS8858H 的数据表和制造商文档。

IHS

Datasheet9 页28 年前

Datasheet0 页0 年前

Fairchild Semiconductor

iiiC

Newark

库存历史记录

3 个月趋势:

Restocked

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1996-07-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2011-12-13

LTD Date2012-06-13

描述

由其分销商提供的 onsemi NDS8858H 的描述。

Trans MOSFET N/P-CH 30V 6.3A/4.8A 8-Pin SOIC N T/R

Verical

Tape & Reel (TR) Surface Mount N and P-Channel 2 Mosfet Array 6.3A 4.8A 4.8A 1W 19ns

Fly-Wing Technology

Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Package/Case:8-SOIC; Drain-Source Breakdown Voltage:30V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Mounting Type:Surface Mount ;RoHS Compliant: Yes

Newark

These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage half bridge applications or CMOS applications when both gates are connected together.

Fairchild Semiconductor