供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-07-01
Lifecycle StatusObsolete (Last Updated: 5 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)
相关零件
InfineonIRFR13N20DTRPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.235Ohm;ID 13A;D-Pak (TO-252AA);PD 110W
描述
由其分销商提供的 onsemi NDDP010N25AZT4H 的描述。
Single N-Channel Power MOSFET 250V, 10A, 420mΩ
NDDP010N25AZ Series 250 V 10 A 420 mOhm N-Channel Power Mosfet - DPAK(TP-FA)
Small Signal Field-Effect Transistor, 10A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Transistor Polarity:n Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:10A; On Resistance Rds(On):0.32Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V Rohs Compliant: Yes
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance420 mΩ
Drain to Source Voltage (Vdss)250 V
Fall Time31 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance980 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation52 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation1 W
Rds On Max420 mΩ
Rise Time26 ns
Schedule B8541290080
Turn-Off Delay Time44 ns
Turn-On Delay Time18 ns
Dimensions
Height2.7 mm