供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-06-01
Lifecycle StatusObsolete (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
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描述
由其分销商提供的 onsemi NDB6030PL 的描述。
P-Channel Logic Level Enhancement Mode Field Effect Transistor -30V, -30A, 42mΩ
Trans MOSFET P-CH 30V 30A 3-Pin(2+Tab) D2PAK
Power Field-Effect Transistor, 30A I(D), 30V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Transistor Polarity:p Channel; Continuous Drain Current Id:-30A; Drain Source Voltage Vds:-30V; On Resistance Rds(On):0.037Ohm; Rds(On) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1.4V; Power Dissipation Pd:75W; No. Of Pins:3Pins Rohs Compliant: Yes
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)30 A
Current Rating-30 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance25 mΩ
Element ConfigurationSingle
Fall Time52 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.57 nF
Max Operating Temperature175 °C
Max Power Dissipation75 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation75 W
Rds On Max25 mΩ
Resistance25 mΩ
Rise Time60 ns
Turn-Off Delay Time50 ns
Turn-On Delay Time12.5 ns
Voltage Rating (DC)-30 V
Dimensions
Height11.33 mm
Length10.67 mm
Width4.83 mm