价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | STB55NF03LT4 | 0 | 1 | Cut Tape | 23h | |||||||
| Microchip USA | STB55NF03LT4 | 400 | 3K | Tray | 1d | |||||||
| Component Stockers USA | STB55NF03LT4 | 437 | >1wk | |||||||||
| Weyland Electronics Group Pte. Ltd. | STB55NF03LT4 | 1,160 | 1 | Tape & Reel | 1d | |||||||
| Win Source | WS-STB55NF03LT4 | 1,400 | 120 | 28m |
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描述
由其分销商提供的 STMicroelectronics STB55NF03LT4 的描述。
N-Channel 30V - 0.01 Ohm - 55A - D2PAK STripFET(TM) II POWER MOSFET
Mosfet Transistor, N Channel, 27.5 A, 30 V, 10 Mohm, 10 V, 1 V |Stmicroelectronics STB55NF03LT4
Trans MOSFET N-CH 30V 55A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 55A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 30V, 55A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:27.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:80W; Operating Temperature Range:-60°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:55A; Package / Case:D2-PAK; Power Dissipation Pd:80W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:16V; Voltage Vgs Rds on Measurement:10V
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)55 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time50 ns
Gate to Source Voltage (Vgs)16 V
Max Operating Temperature175 °C
Max Power Dissipation80 W
Min Breakdown Voltage30 V
Min Operating Temperature-60 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation80 W
Rds On Max13 mΩ
Rise Time400 ns
Threshold Voltage1 V
Turn-Off Delay Time25 ns
Turn-On Delay Time28 ns