onsemi MUN5232DW1T1G

Bipolar Transistors (BJT); MUN5232DW1T1G; ON SEMICONDUCTOR; NPN; 6; 50 V; 100 mA

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

Dual NPN Bipolar Digital Transistor (BRT)

MUN Series 50V 100 mA 4.7 kOhm NPN Silicon Dual Bias Resistor Transistor SOT-363

Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R

TRANS, NPN, 4.7K/4.7K, SOT-363-6; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: 4.7kohm; Resistor Ratio, R1 / R2: 1(Ratio); RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1 series two BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.