onsemi MUN5212T1G

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R

NPN Bipolar Digital Transistor (BRT)

MUN5212 Series 50 V 100 mA Surface Mount NPN Digital Transistor - SC-70-3

250mV@ 300¦ÌA,10mA NPN - Pre-Biased 310mW 5V 500nA 50V 50V 100mA SOT-323 2.1mm*1.24mm*850¦Ìm

60@5mA,10V NPN- 202mW 100mA 50V 500nA SOT-323(SC-70) Digital Transistors ROHS

BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;

Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V

TRANS, AEC-Q101, NPN, 50V, 0.1A, SOT-323; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:22kohm; Base-Emitter Resistor R2:22k

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.