onsemi MTD3055VL

Name: onsemi MTD3055VL
Brand: onsemi
SKU: MTD3055VL

N-Channel 60 V 180 mOhm SMT Enhancement Mode Field Effect Transistor-TO-252-3

EOL

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Distributor		SKU		Min	Pkg
element14 APAC	2	MTD3055VL	0	1	Cut Tape	1.182*	0.939*	0.798*	0.578*	0.551*	17h
Farnell	3	MTD3055VL	0	1	Cut Tape	1.400*	1.287*	1.066*	0.714*	0.714*	5h
Weyland Electronics Group Pte. Ltd.		MTD3055VL	6,261	1	Tape & Reel	2.254	2.254	2.254	2.254	2.254	10h
Win Source		WS-MTD3055VL	9,013	15				2.824	2.713	2.713	6h
Worldway Electronics		MTD3055VL	19,180	7	Tape & Reel		2.252	2.145	2.145	2.102	5h

数据表和文档

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Upverter

Technical Drawing1 页3 年前

Datasheet8 页19 年前

TME

IHS

Farnell

Fairchild Semiconductor

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1996-01-01

Lifecycle StatusEOL (Last Updated: 13 hours ago)

LTB Date2004-12-31

LTD Date2005-06-30

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 13 hours ago)

描述

由其分销商提供的 onsemi MTD3055VL 的描述。

N-Channel 60 V 180 mOhm SMT Enhancement Mode Field Effect Transistor-TO-252-3

Future Electronics

12 AMPS, 60 VOLTS N-CHANNEL DPAK-3 POWER MOSFET Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET, N, SMD, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:60V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:48W; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:12A; Package / Case:DPAK; Power Dissipation Pd:48W; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:1.5V; Voltage Vgs Rds on Measurement:5V

element14 APAC

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Fairchild Semiconductor