onsemi FDD5353

Name: onsemi FDD5353
Brand: onsemi
SKU: FDD5353

N-Channel 60 V 12.3 mOhm Surface Mount PowerTrench Mosfet TO-252-3

$ 0.728

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制造商页面数据表

价格与库存

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Distributor		SKU		Min
Avnet	2	FDD5353	1,552	1						2d
Newark		FDD5353	2,402	1	2.420	1.640	1.190	0.950	0.916
Verical	3	FDD5353	1,600	10		0.856	0.680	0.640	0.640
Arrow Electronics		FDD5353	1,600	1	1.060	0.856	0.680	0.640	0.640
Rochester Electronics	2	FDD5353	2,500				0.797	0.661	0.590	22h

数据表和文档

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Upverter

Technical Drawing1 页3 年前

Master Electronics

IHS

element14 APAC

onsemi

库存历史记录

3 个月趋势:

-19.12%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2008-04-11

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FDD5353 的描述。

N-Channel 60 V 12.3 mOhm Surface Mount PowerTrench Mosfet TO-252-3

Future Electronics

Power Trench® MOSFET, N-Channel, 60V, 50A, 12.3mΩ

onsemi

Power Field-Effect Transistor, 11.5A I(D), 60V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Fairchild Semiconductor

MOSFET, N CH, 60V, 50A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0101ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:69W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

Farnell