备用零件
Price @ 1000
$ 0.09
$ 0.09
Stock
85,174
191,802
191,802
Authorized Distributors
1
2
2
Mount
Through Hole
-
-
Case/Package
TO-92
TO-92-3
TO-92-3
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
30 V
30 V
30 V
Max Collector Current
300 mA
500 mA
500 mA
Transition Frequency
125 MHz
125 MHz
125 MHz
Collector Emitter Saturation Voltage
1.5 V
1.5 V
1.5 V
hFE Min
5000
10000
10000
Power Dissipation
1.5 W
625 mW
625 mW
供应链
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1977-07-01
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2007-12-31
LTD Date2008-06-30
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
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描述
由其分销商提供的 onsemi MPSA13 的描述。
Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Bulk Through Hole Single 1 Bipolar (BJT) Transistor 500mA 350mW 125MHz 30V
NPN Bipolar Darlington Transistor
Small Signal Bipolar Transistor; Transistor Polarity:NPN; Power Dissipation, Pd:0.35W; DC Current Gain Min (hfe):10000; Package/Case:TO-92; C-E Breakdown Voltage:30V; DC Collector Current:1.2A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight201 mg
Technical
Collector Base Voltage (VCBO)30 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage1.5 V
Collector Emitter Voltage (VCEO)30 V
Continuous Collector Current500 mA
Current Rating100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)10 V
hFE Min5000
Max Collector Current300 mA
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation1.5 W
Transition Frequency125 MHz
Voltage Rating (DC)30 V
Dimensions
Height5.33 mm
Length5.2 mm
Width4.19 mm