备用零件
此零件
备用零件
Price @ 1000
$ 0.132
$ 0.043
Stock
4,649,937
162,442
Authorized Distributors
6
3
Mount
Through Hole
Axial
Case/Package
TO-92-3
TO-92
Polarity
NPN
-
Collector Emitter Breakdown Voltage
80 V
-
Max Collector Current
500 mA
500 mA
Transition Frequency
100 MHz
100 MHz
Collector Emitter Saturation Voltage
250 mV
-
hFE Min
100
100
Power Dissipation
625 mW
-
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
描述
由其分销商提供的 onsemi MPSA06RA 的描述。
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
500 mA, 80 V NPN Small Signal Bipolar Junction Transistor
80V 625mW 100@100mA,1V 500mA NPN TO-92-3 Bipolar Transistors - BJT ROHS
MPSAXX Series NPN 625 mW 80 V 0.5 A Through Hole General Purpose Transistor
Trans GP BJT NPN 80V 0.5A 625mW 3-Pin TO-92 T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33.
TRANSISTOR, BIPOL, NPN, 80V, TO-226AA-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:100MHz; Power Dissipation Pd:625mW; DC Collector Current:500mA; DC Current Gain hFE:100hFE
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-92-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight201 mg
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)80 V
Current Rating500 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)4 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min100
Max Breakdown Voltage80 V
Max Collector Current500 mA
Max Frequency100 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation625 mW
Schedule B8541210080
Transition Frequency100 MHz
Voltage Rating (DC)80 V
Dimensions
Height8.77 mm
Length5.2 mm
Width4.19 mm