供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.75
Introduction Date1980-06-30
Lifecycle StatusObsolete (Last Updated: 3 weeks ago)
LTB Date2006-12-31
LTD Date2007-06-30
相关零件
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Bulk Through Hole NPN Single Bipolar (BJT) Transistor 120 @ 10mA 5V 50mA 800mW 100MHz
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Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92S
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Bulk Through Hole NPN KSC2001 Bipolar (BJT) Transistor 135 @ 100mA 1V 700mA 600mW 170MHz
描述
由其分销商提供的 onsemi MPS3563 的描述。
UHF BAND Si NPN RF SMALL SIGNAL TRANSISTOR TO-92
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-226AA
350mW 2V 30V 12V 50mA TO-92-3 5.2mm*4.19mm*5.33mm
RF TRANS NPN 12V 1.5GHZ TO92
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-226-3
MountThrough Hole
Number of Terminals3
Technical
Collector Base Voltage (VCBO)30 V
Collector Emitter Breakdown Voltage12 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)12 V
Current Rating50 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)2 V
Gain14 dB
Gain Bandwidth Product1.5 GHz
hFE Min20
Max Collector Current50 mA
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation350 mW
Transition Frequency600 MHz
Voltage Rating (DC)12 V