供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-12-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-02-23
LTD Date2012-08-23
相关零件
onsemiKSC2330OBU
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 70 @ 20mA 10V 100nA ICBO 1W 50MHz
onsemiKSC2330YBU
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 120 @ 20mA 10V 100nA ICBO 1W 50MHz
onsemiKSC2331YBU
Bulk Through Hole NPN KSC2331 Bipolar (BJT) Transistor 120 @ 50mA 2V 700mA 1W 50MHz
描述
由其分销商提供的 onsemi KSC2310YBU 的描述。
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 120 @ 10mA 5V 50mA 800mW 100MHz
Small Signal Bipolar Transistor, 0.05A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon
Bipolar Transistors - BJT NPN Epitaxial Sil
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-226-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight185 mg
Technical
Collector Base Voltage (VCBO)200 V
Collector Emitter Breakdown Voltage150 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)150 V
Current Rating50 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min120
Max Collector Current50 mA
Max Operating Temperature150 °C
Max Power Dissipation800 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation800 mW
Transition Frequency100 MHz
Voltage Rating (DC)150 V