onsemi MMUN2115LT1G

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

MMUN Series 50 V 100 mA 10 kOhm PNP Silicon Bias Resistor Transistor - SOT-23

PNP Bipolar Digital Transistor (BRT)

Trans Digital BJT PNP 50V 100mA 400mW 3-Pin SOT-23 T/R

PNP - Pre-Biased 400mW 100mA 50V SOT-23(SOT-23-3) Digital Transistors ROHS

Digital Transistor PNP 100mA R=10K SOT23

100 mA 50 V PNP Si SMALL SIGNAL TRANSISTOR TO-236AB

TRANSISTOR, RF, PNP, 50V, SOT-23-3; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: -; Resis

Brt Transistor, 50V, 10Kohm, Sot-23, Full Reel; Transistor, Polaridad:Pnp; Tensión Colector Emisor V(Br)Ceo:50V; Frecuencia De Transición Ft:-; Disipación De Potencia Pd:246Mw; Corriente De Colector Dc:100Ma; Núm. De Contactos:3 |Onsemi MMUN2115LT1G

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package whi designed for low power surface mount applications.