onsemi MMBTH10

Name: onsemi MMBTH10
Brand: onsemi
SKU: MMBTH10

MMBTH10 Series NPN 225 mW 25 V 50 mA SMT RF Transistor - SOT-23-3

$ 0.019

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Verical	2	MMBTH10	461,354	298					0.019	0.019
Arrow Electronics		MMBTH10	461,354	1		0.019	0.019	0.019	0.019	0.019
Rochester Electronics	2	MMBTH10	87,000					0.040	0.033	0.029	28m
Farnell	2	MMBTH10...	0	5	Cut Tape		0.203*	0.081*	0.039*	0.032*	1d
Component Stockers USA		MMBTH10	61,396			0.030	0.030	0.030	0.030	0.030	15h

数据表和文档

下载 onsemi MMBTH10 的数据表和制造商文档。

IHS

Datasheet6 页0 年前

Datasheet0 页0 年前

Datasheet1 页25 年前

Upverter

Fairchild Semiconductor

onsemi

Farnell

库存历史记录

3 个月趋势:

+0.00%

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备用零件

此零件

备用零件

onsemiMMBTH10

onsemiMMBTH10LT1G

Price @ 1000

$ 0.019

$ 0.039

Stock

6,223,278

6,403,713

Authorized Distributors

Collector Emitter Breakdown Voltage

25 V

Continuous Collector Current

50 mA

Collector Base Voltage (VCBO)

30 V

Frequency

650 MHz

Max Power Dissipation

225 mW

300 mW

Transition Frequency

650 MHz

Case/Package

SOT-23

SOT-23-3

Mount

Surface Mount

Polarity

NPN

Gain Bandwidth Product

650 MHz

供应链

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date1989-01-01

Lifecycle StatusObsolete (Last Updated: 3 days ago)

LTB Date2018-06-22

LTD Date2018-12-22

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

描述

由其分销商提供的 onsemi MMBTH10 的描述。

MMBTH10 Series NPN 225 mW 25 V 50 mA SMT RF Transistor - SOT-23-3

Future Electronics

TRANSISTOR, RF, NPN, 25V, 650MHZ, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 25V; Transition Frequency ft: 650MHz; Power Dissipation Pd: 225mW; DC Collector Current: 50mA; DC Current Gain hFE: 60hFE;

Farnell

Transistor; Transistor Type:RF Bipolar; Transistor Polarity:NPN; Power Dissipation, Pd:0.225W; DC Current Gain Min (hfe):60; Package/Case:SOT-323; C-E Breakdown Voltage:25V; DC Collector Current:0.05A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes

Newark

NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 mA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.

Fairchild Semiconductor