onsemi MMBT5551

Name: onsemi MMBT5551
Brand: onsemi
SKU: MMBT5551

600 mA, 160 V NPN General Purpose Bipolar Junction Transistor Legacy Fairchild Part number

$ 0.065

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
Verical	2	MMBT5551	386,908	8696						0.039
Onlinecomponents.com		MMBT5551	46	1	Bulk	0.181	0.181	0.181	0.096	0.025
Rochester Electronics	2	MMBT5551	389,908					0.042	0.035	0.031	21h
element14 APAC	2	MMBT5551	0	5	Cut Tape		0.088*	0.084*	0.054*	0.043*	10h
Farnell	2	MMBT5551	0	5	Cut Tape		0.218*	0.087*	0.042*	0.034*	21h

数据表和文档

下载 onsemi MMBT5551 的数据表和制造商文档。

IHS

Datasheet7 页4 年前

Datasheet9 页12 年前

Datasheet1 页25 年前

Upverter

onsemi

Fairchild Semiconductor

Farnell

库存历史记录

3 个月趋势:

-2.13%

CAD 模型

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备用零件

此零件

备用零件

onsemiMMBT5551

onsemiMMBT5551LT1G

Price @ 1000

$ 0.065

$ 0.042

Stock

2,523,134

55,676,654

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23

SOT-23-3

Polarity

NPN

Collector Emitter Breakdown Voltage

160 V

Max Collector Current

600 mA

60 mA

Transition Frequency

100 MHz

Collector Emitter Saturation Voltage

200 mV

hFE Min

Power Dissipation

350 mW

225 mW

供应链

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date1989-01-01

Lifecycle StatusObsolete (Last Updated: 3 days ago)

LTB Date2018-06-22

LTD Date2018-12-22

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

描述

由其分销商提供的 onsemi MMBT5551 的描述。

600 mA, 160 V NPN General Purpose Bipolar Junction Transistor Legacy Fairchild Part number

onsemi

Trans General Purpose BJT NPN 160 Volt 0.6A 3-Pin SOT-23 Tape and Reel

Jameco

Trans GP BJT NPN 160V 0.6A 350mW 3-Pin SOT-23 T/R / TRANS NPN 160V 0.6A SOT-23

Win Source

MMBT5551 Series 160 V CE Breakdown 0.6 A NPN General Purpose Amplifier - SOT-23

Future Electronics

NPN GENERAL PURPOSE AMPLIFIER Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

ComSIT Distribution GmbH

Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Power Dissipation, Pd:0.35W; DC Current Gain Min (hfe):80; Package/Case:SOT-323; C-E Breakdown Voltage:160V; DC Collector Current:0.6A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes

Newark

TRANSISTOR,NPN,160V,0.6A,SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:350mW; DC Collector Current:600mA; DC Current Gain hFE:250; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Continuous Collector Current Ic:600mA; Current Ic hFE:250mA; DC Current Gain Max (hfe):250; Gain Bandwidth ft Typ:300MHz; Hfe Min:80; Noise Figure Typ:8dB; Package / Case:SOT23; Power Dissipation Ptot Max:350mW; RF Transistor Case:SOT-23; Termination Type:SMD; Test Frequency:15.7kHz

element14 APAC