备用零件
Price @ 1000
$ 0.025
$ 0.045
$ 0.045
Stock
1,186,922
39,575,962
39,575,962
Authorized Distributors
3
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
TO-236-3
TO-236-3
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
-40 V
40 V
40 V
Max Collector Current
200 mA
200 mA
200 mA
Transition Frequency
250 MHz
250 MHz
250 MHz
Collector Emitter Saturation Voltage
400 mV
400 mV
400 mV
hFE Min
30
30
30
Power Dissipation
350 mW
250 mW
250 mW
供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1989-01-01
Lifecycle StatusObsolete (Last Updated: 1 day ago)
LTB Date2018-09-30
LTD Date2019-03-31
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 day ago)
相关零件
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Bipolar (BJT) Single Transistor, PNP, -40 V, 300 mW, -600 mA, 100 RoHS Compliant: Yes
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Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
描述
由其分销商提供的 onsemi MMBT3906 的描述。
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
MMBT3906 Series 40 V 0.2 A 350 mW PNP General Purpose Amplifier - SOT-23
Trans GP BJT PNP 40V 0.2A 3-Pin SOT-23 T/R
This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA.
TRANSISTOR, PNP SOT-23; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 40V; Transistor Case Style: SOT-23; No. of Pins: 3Pins; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Collector Current Ic
TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:250MHz; Power Dissipation Pd:350mW; DC Collector Current:200mA; DC Current Gain hFE:300; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:-250mV; Continuous Collector Current Ic Max:200mA; Current Ic Continuous a Max:200mA; Current Ic hFE:10mA; Device Marking:BT3906; Gain Bandwidth ft Min:250MHz; Gain Bandwidth ft Typ:250MHz; Hfe Min:100; No. of Transistors:1; Noise Factor Max:4dB; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; SMD Marking:2A; Termination Type:SMD; Voltage Vcbo:40V
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Collector Base Voltage (VCBO)-40 V
Collector Emitter Breakdown Voltage-40 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)40 V
Current Rating-200 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency250 MHz
Gain Bandwidth Product250 MHz
hFE Min30
Max Breakdown Voltage40 V
Max Collector Current200 mA
Max Frequency250 MHz
Max Operating Temperature150 °C
Max Power Dissipation225 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityPNP
Power Dissipation350 mW
Transition Frequency250 MHz
Voltage Rating (DC)-40 V
Dimensions
Height1.2 mm
Length6.35 mm
Width6.35 mm